當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IRLML0100TRPBF
MOSFET MOSFT 100V 1.6A 220mOhm 2.5nC Qg
IRLML6401TRPBF
MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl
IGLD60R070D1AUMA1
MOSFET 600V CoolGaN Power Transistor
IPL60R125P7AUMA1
MOSFET HIGH POWER_NEW
IPC100N04S5L1R1ATMA1
MOSFET N-CHANNEL 30/40V
IPT60R028G7XTMA1
MOSFET HIGH POWER NEW
IPW60R037P7XKSA1
MOSFET
IKW75N65ES5
IGBT 晶(jing)體(ti)管(guan) Trenchstop 5 IGBT
IPT059N15N3
MOSFET MV POWER MOS
IPT059N15N3ATMA1
IPT020N10N3ATMA1
IPT007N06N
MOSFET DIFFERENTIATED MOSFETS
IPB107N20N3 G
MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3
IPP051N15N5AKSA1
IPB020N10N5ATMA1
MOSFET N-Ch 100V 120A D2PAK-2
IHW30N160R2FKSA1
IGBT 晶(jing)體(ti)管(guan) RC-IGBT MONO DIODE 1600V 30A
IKB40N65ES5ATMA1
IGBT 晶(jing)體(ti)管(guan) 40A 650V TRENCHSTOP 5 medium speed S5 IGBT copacked with 40A Rapid 1 diode
IPB030N08N3 G
MOSFET N-Ch 80V 160A D2PAK-6 OptiMOS 3
IPD200N15N3GATMA1
IPG20N10S4L-22
MOSFET MOSFET
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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