當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPD60R280P7SAUMA1
MOSFET CONSUMER
IPD50P03P4L-11
MOSFET P-Ch -30V -50A DPAK-2 OptiMOS-P2
IPD122N10N3GATMA1
MOSFET
IPP039N04L G
MOSFET N-Ch 40V 80A TO220-3 OptiMOS 3
IPP042N03L G
MOSFET N-Ch 30V 80A TO220-3 OptiMOS 3
IPD048N06L3 G
MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3
IPG20N10S4L35AATMA1
MOSFET N-CHANNEL_100+
IRLR2908TRPBF
MOSFET 80V 1 N-CH HEXFET 28mOhms 22nC
IPA60R360P7SXKSA1
IPD60R400CEAUMA1
IRF7424TRPBF
MOSFET MOSFT PCh -30V -11A 13.5mOhm 75nC
IPG20N04S4L-11A
MOSFET N-CHANNEL_30/40V
IPG20N04S412AATMA1
MOSFET MOSFET
IPD068P03L3GATMA1
MOSFET SMALL SIGNAL+P-CH
IPG16N10S461AATMA1
IPG20N06S4L26ATMA1
MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
IPD50R500CEAUMA1
IPD60R2K0C6ATMA1
MOSFET LOW POWER_LEGACY
IPN70R600P7SATMA1
IRFHM9331TRPBF
MOSFET 1 P-CH -30V HEXFET 14.6mOhms 16nC
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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