當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPL60R125C7AUMA1
MOSFET HIGH POWER_NEW
IPP65R125C7
IPB60R120C7ATMA1
IPP111N15N3 G
MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3
IPB019N06L3GATMA1
MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
IPT60R125G7XTMA1
MOSFET HIGH POWER NEW
IAUT200N08S5N023ATMA1
MOSFET
IPP60R125CFD7XKSA1
IPB015N04N G
MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3
IKB30N65EH5ATMA1
IGBT 晶(jing)體(ti)管(guan) Infineon s 650 V, 30 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package, redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT i
IKB30N65ES5ATMA1
IGBT 晶(jing)體(ti)管(guan) INDUSTRY 14
IPL65R165CFD
MOSFET HIGH POWER_LEGACY
IPB65R190CFDAATMA1
MOSFET N-Ch 650V 57.2A D2PAK-2
IPB65R150CFDATMA1
MOSFET N-Ch 700V 72A D2PAK-2
IPP65R150CFDXKSA1
MOSFET N-Ch 700V 22.4A TO220-3
IPB240N03S4LR8ATMA1
MOSFET N-CHANNEL_30/40V
IPB035N08N3GATMA1
MOSFET N-Ch 80V 100A D2PAK-2 OptiMOS 3
IPA60R160P6
MOSFET N-Ch 600V 10.4A TO220FP-3
IPA60R160P6XKSA1
IPA65R190E6
MOSFET N-Ch 700V 20.2A TO220FP-3 CoolMOS E6
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