當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IKB20N65EH5ATMA1
IGBT 晶(jing)體(ti)管(guan) Infineon s 650 V, 20 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package, redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT i
IPB180P04P4L02ATMA1
MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2
IPB180P04P4L-02
IPL60R185CFD7AUMA1
MOSFET HIGH POWER_NEW
IRFS7534TRLPBF
MOSFET MOSFET N CH 60V 195A D2PAK
IPP034N08N5AKSA1
MOSFET N-Ch 80V 120A TO220-3
IPL65R195C7
MOSFET HIGH POWER BEST IN CLASS
IPB160N08S403ATMA1
MOSFET N-CHANNEL 75/80V
IPL60R185C7AUMA1
IPB031N08N5ATMA1
MOSFET N-Ch 80V 120A D2PAK-2
IPB031N08N5
IPP80R280P7XKSA1
MOSFET
IPW60R180P7XKSA1
IPL60R210P6
MOSFET LOW POWER PRICE/PERFORM
IPB200N15N3 G
MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3
IPB320N20N3GATMA1
MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
IPB320N20N3 G
IPP320N20N3 G
MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3
IPP320N20N3GXKSA1
IKB15N65EH5ATMA1
IGBT 晶(jing)體(ti)管(guan) Infineon s 650 V, 15 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package, redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT i
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