當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPB180N10S402ATMA1
MOSFET N-Ch 100V 180A D2PAK-6
IRFSL3006PBF
MOSFET MOSFT 60V 270A 2.5mOhm 200nC
IPB038N12N3 G
MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
IPP041N12N3 G
MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3
IPP041N12N3GXKSA1
IGW25N120H3FKSA1
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IPP030N10N3GXKSA1
MOSFET N-Ch 100V 100A TO220-3
IPA65R095C7XKSA1
MOSFET HIGH POWER BEST IN CLASS
IPA65R095C7
IPP65R095C7
MOSFET HIGH POWER_NEW
IPB80R290C3A
MOSFET N-Ch 200V 84A D2PAK-2
IPB60R099C7ATMA1
IPA60R080P7XKSA1
IKB40N65EH5ATMA1
IGBT 晶(jing)體(ti)管(guan) 40A 650V TRENCHSTOP 5 fast H5 IGBT copacked with 40A Rapid 1 diode
IHW30N120R3FKSA1
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS TrenchStop RC
IPA105N15N3 G
MOSFET N-Ch 150V 37A TO220FP-3 OptiMOS 3
IPB017N06N3GATMA1
MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
IPL65R130C7AUMA1
MOSFET N-Ch 650V 15A VSON-4
IPB60R099P7ATMA1
IGW30N65L5XKSA1
IGBT 晶(jing)體(ti)管(guan) 650V IGBT Trenchstop 5
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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