當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BSC057N08NS3 G
MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
BSC040N08NS5ATMA1
MOSFET N-Ch 80V 100A TDSON-8
BSC070N10NS5ATMA1
MOSFET N-Ch 100V 90A TDSON-8
BSC117N08NS5ATMA1
MOSFET N-Ch 80V 49A TDSON-8
BSC076N06NS3GATMA1
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC110N06NS3 G
BSC093N04LS G
MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3
BSC016N06NSTATMA1
MOSFET DIFFERENTIATED MOSFETS
BSC320N20NS3 G
MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3
BSC190N15NS3 G
MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3
BSC014N06NSATMA1
MOSFET N-Ch 60V 100A TDSON-8 OptiMOS
BSC100N06LS3 G
BSM100GP60
IGBT 模(mu)塊(kuai) 600V 100A PIM
BSM300GA170DLC
IGBT 模(mu)塊(kuai) 900V 300A IGBT MODULE
BSM150GB60DLC
IGBT 模(mu)塊(kuai) 600V 150A DUAL
BCP5616H6327XTSA1
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) AF TRANSISTORS
BCX5316H6327XTSA1
BCR08PNH6327XTSA1
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 預(yu)偏(pian)置(zhi) AF DIGITAL TRANSISTOR
BCR 583 E6327
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 預(yu)偏(pian)置(zhi) PNP Silicon Digital TRANSISTOR
BCR 185W H6327
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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