當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BSC120N03MSGATMA1
MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M
BSP89 H6327
MOSFET SIPMOS Sm-Signal 240V 6Ohm 350mA
BSS131H6327XT
MOSFET N-Ch 240V 100mA SOT-23-3
BSS83PH6327XT
MOSFET P-Ch -60V -330mA SOT-23-3
BSP716NH6327XTSA1
MOSFET SMALL SIGNAL+N-CH
BSD235N H6327
MOSFET N-Ch 20V 950mA SOT-363-6
BSS138WH6433XTMA1
MOSFET N-Ch 60V 280mA SOT-323-3
BSS119NH6433XTMA1
MOSFET OptiMOS Sm-Signal 100V 6Ohm 190mA
BFP 182R E7764
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) NPN Silicon RF TRANSISTOR
BFR340L3E6327XTMA1
BFR 340L3 E6327
BFP 450 H6327
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTOR
BFP 650 H6327
BSC600N25NS3GATMA1
MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
BSC047N08NS3GATMA1
MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
BSC028N06LS3GATMA1
MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
BSB280N15NZ3 G
MOSFET N-Ch 150V 30A CanPAK3 MZ OptiMOS 3
BSC011N03LSTATMA1
MOSFET DIFFERENTIATED MOSFETS
BSC040N10NS5
MOSFET N-Ch 100V 100A TDSON-8
BSC040N10NS5ATMA1
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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