當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BFP 720FESD H6327
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTORS
BFP 196W H6327
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTOR
BFP196WH6327XTSA1
BFR380FH6327XTSA1
BSO033N03MSGXUMA1
MOSFET N-Ch 30V 22A DSO-8 OptiMOS 3M
BSO130P03S H
MOSFET P-Ch -30V -11.3A DSO-8 OptiMOS P
BSO615C G
MOSFET N and P-Ch 60V 3.1A, -2A DSO-8
BSO200P03S H
MOSFET P-Ch -30V -9.1A DSO-8 OptiMOS P
BSO220N03MDGXUMA1
MOSFET N-Ch 30V 7.7A DSO-8 OptiMOS 3M
BSZ065N03LSATMA1
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
BSZ060NE2LS
MOSFET N-Ch 25V 40A TDSON-8 OptiMOS
BSZ120P03NS3E G
MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
BSL373SNH6327XTSA1
MOSFET SMALL SIGNAL+P-CH
BSZ120P03NS3EGATMA1
BSL296SNH6327XTSA1
BSZ180P03NS3E G
MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
BSZ180P03NS3GATMA1
BSC0996NSATMA1
MOSFET TRANSITIONAL MOSFETS
BSC886N03LS G
MOSFET N-Ch 30V 65A TDSON-8
BSS159NH6906XTSA1
MOSFET N-Ch 60V 230mA SOT-23-3
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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