當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BSC050N03LSGATMA1
MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
BSZ065N03LS
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
BSZ060NE2LSATMA1
MOSFET N-Ch 25V 40A TDSON-8 OptiMOS
BSP315PH6327XTSA1
MOSFET P-Ch -60V -1.17A SOT-223-3
BSC080N03MS G
MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M
BSL606SN H6327
MOSFET N-Ch 60V 4.5A TSOP-6
BSL307SPH6327XTSA1
MOSFET SMALL SIGNAL+P-CH
BSL215C H6327
BSL308CH6327XTSA1
BSS131H6327XTSA1
MOSFET N-Ch 240V 100mA SOT-23-3
BSR316PH6327XTSA1
BFR 193L3 E6327
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) NPN Silicon RF TRANSISTOR
BSS131 H6327
BSS83PH6327XTSA1
MOSFET P-Ch SOT-23-3
BSS83P H6327
BFR 380L3 E6327
BSS315P H6327
MOSFET P-Ch -30V -1.5A SOT-23-3
BFR 460L3 E6327
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) NPN Silicn RF TRNSTR 4.5V 50mA
BSS123N H6327
MOSFET N-Ch 100V 190mA SOT-23-3
BSD235CH6327XTSA1
MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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