當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BSP320SH6433XTMA1
MOSFET SIPMOS Sm-Signal 60V 120mOhm 2.9A
BSS192P H6327
MOSFET P-Ch -250V -190mA SOT-89-3
BSS123NH6327XT
MOSFET N-Ch 100V 190mA SOT-23-3
BF 888 H6327
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTOR
BFP 182W H6327
BFP405H6740XTSA1
BFR 840L3RHESD E6327
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTORS
BSM75GB120DN2
IGBT 模(mu)塊(kuai) 1200V 75A DUAL
BC 858C E6327
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) PNP Silicon AF TRANSISTOR
BSZ076N06NS3 G
MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3
BSO203P H
MOSFET P-Ch -20V -8.2A DSO-8 OptiMOS P
BC 846UPN E6327
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) NPN/PNP Silicon AF TRANSISTOR ARRAYS
BCR 533 E6327
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 預(yu)偏(pian)置(zhi) NPN Silicon Digital TRANSISTOR
BSM300GB60DLC
IGBT 模(mu)塊(kuai) 600V 300A DUAL
BCW 66KG E6327
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) NPN 45.0 V 100 mA
BCR 141W H6327
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 預(yu)偏(pian)置(zhi) AF DIGITAL TRANSISTOR
BC 856U E6327
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) PNP Silicon AF Transistor Arrays
BCX 71J E6327
BDP953H6327XTSA1
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) AF TRANSISTORS
BCX 70J E6327
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) NPN Silicon AF TRANSISTOR
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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