當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BCP5416H6327XTSA1
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) AF TRANSISTORS
BC 848B E6327
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) NPN Silicon AF TRANSISTOR
BCR 08PN H6327
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 預偏置(zhi) AF DIGITAL TRANSISTOR
BYM600A170DN2
IGBT 模(mu)塊(kuai) 1700V 600A F/DIODE
BSM25GD120DN2E3224
IGBT 模(mu)塊(kuai) N-CH 1.2KV 35A
BSM50GB60DLC
IGBT 模(mu)塊(kuai) 600V 50A DUAL
BSM100GB120DN2
IGBT 模(mu)塊(kuai) 1200V 100A DUAL
BSM15GD120DN2E3224
IGBT 模(mu)塊(kuai) N-CH 1.2KV 25A
BSC019N02KS G
MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
BSC097N06NSTATMA1
MOSFET DIFFERENTIATED MOSFETS
BSP612PH6327XTSA1
MOSFET
BSL207N H6327
MOSFET SMALL SIGNAL+P-CH
BSL305SPEH6327XTSA1
BSL207NH6327XTSA1
BFP843FH6327XTSA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTORS
BSL316C H6327
BSS315PH6327XT
MOSFET P-Ch -30V -1.5A SOT-23-3
BSS340NWH6327XTSA1
BSS84P H6433
MOSFET P-Ch -60V -170mA SOT-23-3
BF886H6327XTSA1
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