當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BSV236SPH6327XT
MOSFET P-Ch -20V -1.5A SOT-363-6
BSR302NL6327HTSA1
MOSFET N-Ch 30V 3.7A SOT-23-3
BSS87H6327FTSA1
MOSFET N-Ch 240V 260mA SOT-89-3
BSR202N L6327
MOSFET N-Ch 20V 3.8A SOT-23-3
BFR193FH6327XTSA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTOR
BSD816SNH6327XTSA1
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) SMALL SIGNAL N-CH
BFR193WH6327XTSA1
BSS806NEH6327XTSA1
MOSFET N-Ch 20V 2.3A SOT-23-3
BSS123NH6327XTSA1
MOSFET N-Ch 100V 190mA SOT-23-3
BSS223PWH6327XTSA1
MOSFET P-Ch -20V -390mA SOT-323-3
BSS7728NH6327XTSA2
MOSFET SMALL SIGNALN-CH
BSD235C H6327
MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6
BFR 181W H6327
BFP 410 H6327
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTORS
BFP 181 E7764
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) NPN Silicon RF TRANSISTOR
BFP 650F H6327
BFP 183W H6327
BFP 842ESD H6327
BFP 420F H6327
BFS 17S H6327
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan):隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan):隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)(製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo))為(wei)主(zhu)要(yao)客(ke)戶(hu)
友(you)情(qing)鏈(lian)接(jie)
深(shen)圳(zhen)市(shi)宏(hong)欣(xin)微(wei)電(dian)子(zi)科(ke)技(ji)有(you)限(xian)公(gong)司(si)
原(yuan)廠(han)原(yuan)裝(zhuang)正(zheng)品(pin),備(bei)大(dai)量(liang)庫(ku)存(cun)
7X24小(xiao)時(shi)詢(xun)價(jia)熱(re)線(xian)
0755-82572287
粵(yue)ICP備(bei)2022064169號(hao)