當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BC 850CW H6327
雙極(ji)晶體管 - 雙極(ji)結型(xing)晶體管(BJT) AF TRANSISTOR
BSM200GB60DLC
IGBT 模(mu)塊(kuai) 600V 200A DUAL
BSM75GAL120DN2
IGBT 模(mu)塊(kuai) 1200V 75A CHOPPER
BSC079N10NS G
MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2
BSC130P03LS G
MOSFET P-Ch -30V -22.5A TDSON-8 OptiMOS P
BSC105N10LSF G
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
BSC016N03LSGATMA1
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC016N03LS G
BF 2040 E6814
射頻金屬氧化物半導體場效應(ying)(RF MOSFET)晶體管 Silicon N-Channel MOSFET Tetrode 5V
BSC082N10LS G
BSM75GB60DLC
IGBT 模(mu)塊(kuai) 600V 75A DUAL
BSC100N10NSF G
BSC010NE2LSI
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC010NE2LSATMA1
BSC020N03MS G
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
BSC014NE2LSIATMA1
BSC109N10NS3 G
MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3
BSC067N06LS3GATMA1
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSZ0910NDXTMA1
MOSFET DIFFERENTIATED MOSFETS
BSZ067N06LS3GATMA1
MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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