當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BSZ034N04LSATMA1
MOSFET MV POWER MOS
BSC084P03NS3 G
MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3
BSC0902NSI
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
BSC035N04LSGATMA1
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSO613SPVGHUMA1
MOSFET P-Ch -60V -3.44A DSO-8
BSC030N03LS G
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSZ22DN20NS3GATMA1
MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
BSP129H6906XTSA1
MOSFET N-Ch 240V 350mA SOT-223-3
BSC057N03LS G
MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3
BSC093N04LSGATMA1
MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3
BSP171PH6327XTSA1
MOSFET P-Ch -60V 1.9A SOT-223-3
BSP316P H6327
MOSFET P-Ch -100V -680mA SOT-223-3
BSP322PH6327XTSA1
MOSFET P-Ch -100V 1A SOT-223-3
BSP324H6327XTSA1
MOSFET N-Ch 400V 170mA SOT-223-3
BSZ340N08NS3GATMA1
MOSFET N-Ch 80V 23A TSDSON-8 OptiMOS 3
BSL303SPEH6327XTSA1
MOSFET SMALL SIGNAL+P-CH
BSL314PEH6327XTSA1
BSP88H6327XTSA1
BSR92PH6327XTSA1
BFP 405 H6740
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTOR
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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