當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPS65R1K4C6
MOSFET N-Ch 700V 3.2A IPAK-3
IPD30N10S3L-34
MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
IRLR7821TRLPBF
MOSFET MOSFT 30V 65A 10mOhm 10nC Log Lvl
IPW65R041CFDFKSA1
MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2
IKW75N60T
IGBT 晶(jing)體(ti)管(guan) LOW LOSS DuoPack 600V 75A
IGW60T120FKSA1
IGBT 晶(jing)體(ti)管(guan) LOW LOSS IGBT TECH 1200V 60A
IGW60T120
IPW65R110CFDAFKSA1
MOSFET N-Ch 650V 31.2A TO247-3
IGW75N60TFKSA1
IGBT 晶(jing)體(ti)管(guan) LOW LOSS IGBT TECH 600V 75A
IGW75N60T
IKZ50N65EH5XKSA1
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IPP65R110CFDAAKSA1
MOSFET N-Ch 650V 31.2A TO220-3
IPA075N15N3GXKSA1
MOSFET N-Ch 150V 43A TO220FP-3 OptiMOS 3
IPP220N25NFDAKSA1
MOSFET N-Ch 250V 61A TO220-3
IKW50N60TFKSA1
IGBT 晶(jing)體(ti)管(guan) LOW LOSS DuoPack 600V 50A
IKW50N60T
IPP110N20N3 G
MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3
IGW40T120
IGBT 晶(jing)體(ti)管(guan) LOW LOSS IGBT TECH 1200V 40A
IPB015N08N5ATMA1
MOSFET N-Ch 80V 180A D2PAK-2
IPW65R095C7XKSA1
MOSFET HIGH POWER_NEW
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
友(you)情(qing)鏈(lian)接(jie)
深(shen)圳(zhen)市(shi)宏(hong)欣(xin)微(wei)電(dian)子(zi)科(ke)技(ji)有(you)限(xian)公(gong)司(si)
原(yuan)廠(han)原(yuan)裝(zhuang)正(zheng)品(pin)，備(bei)大(dai)量(liang)庫(ku)存(cun)
7X24小(xiao)時(shi)詢(xun)價(jia)熱(re)線(xian)
0755-82572287
粵(yue)ICP備(bei)2022064169號(hao)