當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IHW40N65R5
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS TrenchStop 5
IKW08T120FKSA1
IGBT 晶(jing)體(ti)管(guan) LOW LOSS DuoPack 1200V 8A
IKW08T120
IGW50N65H5FKSA1
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IPP024N06N3GXKSA1
MOSFET N-Ch 60V 120A TO220-3
IHW20N120R3FKSA1
IGBT 晶(jing)體(ti)管(guan) IH SeriesRev Conduct IGBT Monolithic Body
IRFP4227PBF
MOSFET MOSFT 200V 65A 25mOhm 70nC Qg
IPW65R150CFDFKSA1
MOSFET N-Ch 700V 22.4A TO247-3
IPP020N06NAKSA1
IPP020N06N
IHW40N60R
IPB015N04NGATMA1
MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3
IKW20N60T
IGBT 晶(jing)體(ti)管(guan) LOW LOSS DuoPack 600V 20A
IRFP4321PBF
MOSFET MOSFT 150V 78A 15.5mOhm 71nC Qg
IPW60R160P6FKSA1
MOSFET HIGH POWER_LEGACY
IRFP7530PBF
MOSFET MOSFET N CH 60V 195A TO247
IPP120N06S4H1AKSA2
MOSFET MOSFET
IPA037N08N3 G
MOSFET N-Ch 80V 75A TO220FP-3 OptiMOS 3
IRFB7430PBF
MOSFET 40V 1.3mOhm 195A HEXFET 375W 300nC
IDW40E65D2
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS Rapid Switching
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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