當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPP60R180C7XKSA1
MOSFET HIGH POWER_NEW
IPB180N04S4-H0
MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2
IPA80R280P7XKSA1
MOSFET
IPAN80R280P7XKSA1
MOSFET LOW POWER_NEW
IKB20N60H3
IGBT 晶(jing)體(ti)管(guan) 600v Hi-Speed SW IGBT
IRFSL3207ZPBF
MOSFET MOSFT 75V 170A 4.1mOhm 120nC
IPB600N25N3GATMA1
MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3
IPD65R250E6XTMA1
MOSFET N-Ch 700V 16.1A DPAK-2
IPI600N25N3 G
MOSFET N-Ch 250V 25A I2PAK-3 OptiMOS 3
IRF2805STRLPBF
MOSFET MOSFT 55V 135A 4.7mOhm 150nC
IPP80R360P7XKSA1
IPB65R310CFDATMA1
MOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2
IGB20N60H3
IRFS23N15DTRLP
MOSFET MOSFT 150V 23A 90mOhm 37nC
IPA60R280P6
MOSFET N-Ch 600V 7.7A TO220FP-3
IPP114N12N3 G
MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3
IPD90N10S4L06ATMA1
MOSFET MOSFET
IGP20N65F5
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS TrenchStop 5
IPAW60R190CEXKSA1
MOSFET CONSUMER
IRF3710LPBF
MOSFET MOSFT 100V 57A 23mOhm 86.7nC
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