當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPW60R041P6
MOSFET HIGH POWER PRICE/PERFORM
IPW60R040CFD7XKSA1
MOSFET HIGH POWER_NEW
IPP65R045C7
MOSFET N-Ch 650V 46A TO220-3 CoolMOS C7
IPP65R045C7XKSA1
IKFW90N60EH3XKSA1
IGBT 晶(jing)體(ti)管(guan) High speed hard switching 600 V, 90 A third generation TRENCHSTOP IGBT3 co-packed with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation package for a best cost efficient solution.
IPW65R045C7FKSA1
MOSFET N-Ch 650V 46A TO247-3 CoolMOS C7
IPW60R055CFD7XKSA1
IPL60R060CFD7AUMA1
IRG7PH35UD-EP
IGBT 晶(jing)體(ti)管(guan) IGBT DISCRETES
IPP220N25NFD
MOSFET N-Ch 250V 61A TO220-3
IPB017N10N5ATMA1
MOSFET N-Ch 100V 180A D2PAK-2
IRGP4062DPBF
IGBT 晶(jing)體(ti)管(guan) 600V UltraFast Trench IGBT
IRGP4640DPBF
IGBT 晶(jing)體(ti)管(guan) 600V UltraFast IGBT 40A 250W 75nC
IRFB4137PBF
MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-220AB
IPB117N20NFDATMA1
MOSFET N-Ch 200V 84A D2PAK-2
IPP65R095C7XKSA1
IKW15N120H3FKSA1
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IKW15N120H3
IPP60R099C7XKSA1
IPB90R340C3ATMA1
MOSFET N-Ch 900V 15A D2PAK-2
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