當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPB60R280C6
MOSFET N-Ch 600V 13.8A D2PAK-2 CoolMOS C6
IRF4905STRRPBF
MOSFET 1 P-CH -55V HEXFET 20mOhms 120nC
IPP50R299CPXKSA1
MOSFET N-Ch 500V 12A TO220-3
IRFH4253DTRPBF
MOSFET 25V Dual N-Ch 1.45mOhm 31nC 45A
IRF6892STRPBF
MOSFET 25V 1 N-CH HEXFET 1.7mOhms 17nC
IPD65R600C6
MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS C6
IRG4PH50UDPBF
IGBT 晶(jing)體(ti)管(guan) 1200V ULTRAFAST 5-40 KHZ COPACK IGBT
IPP60R099CP
MOSFET N-Ch 650V 31A TO220-3 CoolMOS CP
IPB60R099C6
MOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6
IRG4PC30UDPBF
IGBT 晶(jing)體(ti)管(guan) 600V ULTRAFAST 8-60 KHZ COPACK IGBT
IPP60R190C6
MOSFET N-Ch 650V 20.2A TO220-3 CoolMOS C6
IPD640N06L G
MOSFET N-Ch 60V 18A DPAK-2
IRG4PH40KDPBF
IGBT 晶(jing)體(ti)管(guan) 1200V ULTRAFAST 4-20 KHZ COPACK IGBT
IRG4PC50SPBF
IGBT 晶(jing)體(ti)管(guan) 600V DC-1 KHZ (STD) DISCRETE IGBT
IRG4PH50UPBF
IGBT 晶(jing)體(ti)管(guan) 1200V ULTRAFAST 5-40KHZ DSCRETE IGBT
IRG4PC40KDPBF
IGBT 晶(jing)體(ti)管(guan) 600V ULTRAFAST 8-25 KHZ COPACK IGBT
IRGIB15B60KD1P
IGBT 晶(jing)體(ti)管(guan) 600V Low-Vceon
IRG4PC50WPBF
IGBT 晶(jing)體(ti)管(guan) 600V Warp 60-150kHz
IPD60R385CPATMA1
MOSFET N-Ch 600V 9A DPAK-2
IRGPS46160DPBF
IGBT 晶(jing)體(ti)管(guan) 600V TRENCH IGBT ULTRAFAST
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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