當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IRGSL4062DPBF
IGBT 晶(jing)體(ti)管(guan) 600V Low VCEon
IRGB4060DPBF
IGBT 晶(jing)體(ti)管(guan) 600V UltraFast Trench IGBT
IRFS4010TRL7PP
MOSFET MOSFT 100V 190A 4.0mOhm 150nC Qg
IRGP6690DPBF
IGBT 晶(jing)體(ti)管(guan) 600V UltraFast IGBT TO-247
IRGB4061DPBF
IRG4RC10SDPBF
IGBT 晶(jing)體(ti)管(guan) 600V DC-1 KHZ (STD) COPACK IGBT
IRGS14C40LPBF
IGBT 晶(jing)體(ti)管(guan) 430V LOW-VCEON DISCRETE IGBT
IKW50N60TA
IGBT 晶(jing)體(ti)管(guan) 600V 50A 100nA
IPP60R099C6XKSA1
MOSFET N-Ch 650V 38A TO220-3 CoolMOS C6
IKW30N60TA
IGBT 晶(jing)體(ti)管(guan) IGBT TrnchStp w/Soft Fast recovery
IPW60R125C6
MOSFET N-Ch 600V 30A TO247-3 CoolMOS C6
IRG4BC40W-LPBF
IGBT 晶(jing)體(ti)管(guan) 600V Warp 60-150kHz
IPA60R165CP
MOSFET N-Ch 600V 21A TO220FP-3 CoolMOS CP
IPB60R160C6
MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6
IPP60R160C6
MOSFET N-Ch 600V 23.8A TO220-3 CoolMOS C6
IPP60R250CP
MOSFET N-Ch 600V 12A TO220-3 CoolMOS CP
IPP60R190C6XKSA1
MOSFET N-Ch 650V 20.2A TO220-3 CoolMOS C6
IPA60R190C6XKSA1
MOSFET N-Ch 600V 20.2A TO220FP-3 CoolMOS C6
IPA60R190C6
IRG4BC30FPBF
IGBT 晶(jing)體(ti)管(guan) 600V Fast 1-8kHz
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
友(you)情(qing)鏈(lian)接(jie)
深(shen)圳(zhen)市(shi)宏(hong)欣(xin)微(wei)電(dian)子(zi)科(ke)技(ji)有(you)限(xian)公(gong)司(si)
原(yuan)廠(han)原(yuan)裝(zhuang)正(zheng)品(pin)，備(bei)大(dai)量(liang)庫(ku)存(cun)
7X24小(xiao)時(shi)詢(xun)價(jia)熱(re)線(xian)
0755-82572287
粵(yue)ICP備(bei)2022064169號(hao)