當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPAN60R180P7SXKSA1
MOSFET
IRF6722MTRPBF
MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
IRF6637TRPBF
IRF6714MTRPBF
MOSFET 25V 1 N-CH HEXFET 2.1mOhms 29nC
IRFU7740PBF
MOSFET TRENCH_MOSFETS
IPI80N06S405AKSA2
MOSFET MOSFET
IRFI7440GPBF
IRF3709ZSTRRPBF
MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
IPA65R660CFDXKSA2
MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
IPG20N06S415ATMA2
IRF6725MTRPBF
MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
IRFR4104TRLPBF
MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC
IPB80N06S4L05ATMA2
MOSFET N-Ch 60V 80A D2PAK-2
IPP100N08N3 G
MOSFET N-Ch 80V 70A TO220-3 OptiMOS 3
IPC100N04S5L1R5ATMA1
MOSFET N-CHANNEL 30/40V
IPG20N06S4L14AATMA1
MOSFET N-CHANNEL_55/60V
IPG20N06S4L14ATMA2
IPAN60R280P7SXKSA1
IPG20N06S2L50AATMA1
MOSFET N-Ch 55V 20A TDSON-8
IPD053N06N
MOSFET N-Ch 60V 45A DPAK-2
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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