當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IRF8308MTRPBF
MOSFET 30V N-Channel HEXFET Power MOSFET
IRF9395MTRPBF
MOSFET DUAL P-CH -30V 7mOhms 64nC
IRF6716MTRPBF
MOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC
IRL8114PBF
MOSFET TRENCH_MOSFETS
IPD050N10N5ATMA1
MOSFET DIFFERENTIATED MOSFETS
IPI70N12S3L12AKSA1
MOSFET N-CHANNEL 100+
IPB70N12S3L12ATMA1
IPD90N10S406ATMA1
MOSFET N-CHANNEL_100+
IRF6797MTRPBF
MOSFET 25V SINGLE N-CH 20V VGS MAX
IPD046N08N5ATMA1
IRF6724MTRPBF
MOSFET 30V 1 N-CH HEXFET 2.5mOhms 33nC
IPD70N12S311ATMA1
MOSFET MOSFET_(120V,300V)
IPD70N12S3L12ATMA1
IPD06P002NATMA1
MOSFET
IPP50N12S3L15AKSA1
IPP65R420CFDXKSA2
MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
IPA65R420CFDXKSA2
IPI50N12S3L15AKSA1
IRFH5004TRPBF
MOSFET 40V 1 N-CH HEXFET 2.6mOhms 73nC
IPG20N04S4L07AATMA1
MOSFET N-Ch 40V 20A TDSON-8
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