當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPA90R1K0C3
MOSFET N-Ch 900V 5.7A TO220FP-3 CoolMOS C3
IGB03N120H2
IGBT 晶(jing)體(ti)管(guan) HIGH SPEED 2 TECH 1200V 3A
IPD65R380C6
MOSFET N-Ch 700V 10.6A DPAK-2 CoolMOS C6
IPD65R600C6BTMA1
MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS C6
IPD031N03LGBTMA1
MOSFET N-Ch 30V 90A DPAK-2
IPB80N04S3-03
MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
IPP80N06S208AKSA2
MOSFET N-CHANNEL_55/60V
IPB100N04S3-03
MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T
IPB47N10SL-26
MOSFET N-Ch 100V 47A D2PAK-2 SIPMOS
IPB180N04S3-02
MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T
IPB80N04S3-04
IFS150B17N3E4P_B11
IGBT 模(mu)塊(kuai)
IPZ60R017C7XKSA1
MOSFET
IPA65R045C7XKSA1
MOSFET HIGH POWER BEST IN CLASS
IPZ60R060C7XKSA1
MOSFET HIGH POWER_NEW
IPW65R080CFD
MOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2
IPT210N25NFDATMA1
IPB407N30NATMA1
MOSFET MV POWER MOS
IPA65R065C7XKSA1
IPB65R099C6
MOSFET N-Ch 700V 115A D2PAK-2
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