當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IRG4PH40KPBF
IGBT 晶(jing)體(ti)管(guan) 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
IPI60R165CPXKSA1
MOSFET N-Ch 650V 21A I2PAK-3
IRF3575DTRPBF
MOSFET 60A Exposed Top Intg Pwr Block
IPI60R199CPXKSA2
MOSFET HIGH POWER_LEGACY
IPP05CN10N G
MOSFET N-Ch 100V 100A TO220-3 OptiMOS 2
IPP60R160C6XKSA1
MOSFET N-Ch 600V 23.8A TO220-3 CoolMOS C6
IRF2204SPBF
MOSFET MOSFT 40V 170A 3.6mOhm 130nC
IGW03N120H2
IGBT 晶(jing)體(ti)管(guan) HIGH SPEED 2 TECH 1200V 3A
IRGIB6B60KDPBF
IGBT 晶(jing)體(ti)管(guan) 600V Low-Vceon
IPP70N10SL-16
MOSFET N-Ch 100V 70A TO220-3 SIPMOS
IRG4BC30W-SPBF
IGBT 晶(jing)體(ti)管(guan) 600V WARP 60-150 KHZ DISCRETE IGBT
IRG4BH20K-STRLP
IGBT 模(mu)塊(kuai) 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
IRF3808STRRPBF
MOSFET 75V 1 N-CH HEXFET 7mOhms 150nC
IRF6898MTRPBF
MOSFET 25V 1 N-CH HEXFET 1.1mOhms 35nC
IPB160N04S3-H2
MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T
IKB03N120H2
IPB60R280C6ATMA1
MOSFET N-Ch 600V 13.8A D2PAK-2 CoolMOS C6
IPI80N04S3-03
MOSFET N-Ch 40V 80A I2PAK-3 OptiMOS-T
IPB60R280P6ATMA1
MOSFET LOW POWER_PRICE/PERFORM
IRL3803VSPBF
MOSFET MOSFT 30V 140A 5.5mOhm 50.7nC LogLv
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