當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPA65R110CFDXKSA2
MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
IPP65R110CFDXKSA2
IFF600B12ME4S8PB11BOSA1
IGBT 模(mu)塊(kuai) Description:
IPP041N12N3GXK
MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3
IPZA60R045P7XKSA1
MOSFET
IPW60R045P7XKSA1
IPD06P004NATMA1
IFS75B12N3E4_B31
IGBT 模(mu)塊(kuai) MIPAQ BASE 1200V 75A
IPD65R950CFDATMA2
IFF450B12ME4S8PB11BPSA1
IPD65R1K4CFDATMA2
IPW80R290C3AXKSA1
IKW75N60H3
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS TrenchStop
IKP40N65H5
IGBT 晶(jing)體(ti)管(guan) ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
IPD06P005NATMA1
IPD06P005LATMA1
IPD060N03L G
MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3
IPP65R190CFDXKSA2
IPA65R190CFDXKSA2
IPI65R190CFDXKSA2
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
友(you)情(qing)鏈(lian)接(jie)
深(shen)圳(zhen)市(shi)宏(hong)欣(xin)微(wei)電(dian)子(zi)科(ke)技(ji)有(you)限(xian)公(gong)司(si)
原(yuan)廠(han)原(yuan)裝(zhuang)正(zheng)品(pin)，備(bei)大(dai)量(liang)庫(ku)存(cun)
7X24小(xiao)時(shi)詢(xun)價(jia)熱(re)線(xian)
0755-82572287
粵(yue)ICP備(bei)2022064169號(hao)