當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BSC014N04LSI
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
BSC037N08NS5ATMA1
MOSFET N-Ch 80V 100A TDSON-8
BSC010N04LSATMA1
BSC027N04LS G
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSZ160N10NS3 G
MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3
BSC030P03NS3 G
MOSFET P-Ch -30V 25.4A TDSON-8 OptiMOS P3
BSZ086P03NS3 G
MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3
BSS169 H6327
MOSFET N-Ch 100V 90mA SOT-23-3
BSS169H6327XT
BSZ096N10LS5ATMA1
MOSFET
BSC0504NSIATMA1
MOSFET LV POWER MOS
BSS670S2LH6433XTMA1
MOSFET SMALL SIGNAL+P-CH
BSZ013NE2LS5IATMA1
BSZ070N08LS5ATMA1
BSP179H6327XTSA1
BSC0500NSIATMA1
BSC098N10NS5
MOSFET Pwr transistor 100V OptiMOS 5
BSZ014NE2LS5IFATMA1
BSC015NE2LS5IATMA1
BSZ040N06LS5ATMA1
MOSFET MV POWER MOS
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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