當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BSC009NE2LSXT
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC011N03LSIXT
MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS
BSC018N04LSGXT
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC018NE2LSIXT
BSC030N04NSGXT
BSC024NE2LSXT
BSC090N03MSGXT
MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
BSO203SP H
MOSFET P-Ch -20V -8.9A DSO-8 OptiMOS P
BSL606SNH6327XTSA1
MOSFET OptiMOS3 Sm-Signl 60V 60mOhm 1.5A
BFP182RE7764HTSA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) NPN Silicon RF TRANSISTOR
BFP 450 H6433
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTOR
BSL806NH6327XTSA1
MOSFET SMALL SIGNAL+P-CH
BSM200GD60DLC
IGBT 模(mu)塊(kuai) 600V 200A 3-PHASE
BSM300GB120DLC
IGBT 模(mu)塊(kuai) 1200V 300A DUAL
BSM150GB170DLC
IGBT 模(mu)塊(kuai) 1700V 150A DUAL
BSM400GA120DN2
IGBT 模(mu)塊(kuai) 1200V 400A SINGLE
BSM200GB120DLC
IGBT 模(mu)塊(kuai) 1200V 200A DUAL
BSM100GB170DLC
IGBT 模(mu)塊(kuai) 1700V 100A DUAL
BSM150GB120DLC
IGBT 模(mu)塊(kuai) 1200V 150A DUAL
BSM50GP60
IGBT 模(mu)塊(kuai) 600V 50A PIM
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