當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BSM50GD60DLC
IGBT 模(mu)塊(kuai) 600V 50A 3-PHASE
BSM30GD60DLC
IGBT 模(mu)塊(kuai) 600V 30A 3-PHASE
BFY64004PZZZA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) HIREL
BSM35GB120DN2
IGBT 模(mu)塊(kuai) 1200V 35A DUAL
BSC016N03LSGXT
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSM400GA170DLC
IGBT 模(mu)塊(kuai) 1700V 400A SINGLE
BYM300B170DN2
IGBT 模(mu)塊(kuai) N-CH 1.7KV 300A
BSM50GD170DL
IGBT 模(mu)塊(kuai) N-CH 1.7KV 100A
BSM100GD60DLC
IGBT 模(mu)塊(kuai) 600V 100A 3-PHASE
BSM50GD120DLC
IGBT 模(mu)塊(kuai) 1200V 50A 3-PHASE
BSM100GAL120DLCK
IGBT 模(mu)塊(kuai) 1200V 100A CHOPPER
BSS7728N H6327
MOSFET N-Ch 60V 200mA SOT-23-3
BSD340NH6327XTSA1
MOSFET SMALL SIGNAL+P-CH
BCR 183S H6433
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 預(yu)偏(pian)置(zhi) AF DIGITAL TRANSISTOR
BCP 55 H6327
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結型(xing)晶(jing)體(ti)管(guan)(BJT) AF TRANSISTOR
BSM75GAR120DN2
IGBT 晶(jing)體(ti)管(guan) 1200V 100A GAR CH
BCP55H6327XTSA1
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結型(xing)晶(jing)體(ti)管(guan)(BJT) AF TRANSISTORS
BSS87H6327XTSA1
BSB008NE2LXXT
MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS
BFR740EL3E6829XTSA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTORS
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