當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPN70R450P7SATMA1
MOSFET CONSUMER
IPN80R2K4P7ATMA1
MOSFET LOW POWER_NEW
IPS70R1K4P7SAKMA1
MOSFET
IPN70R2K0P7SATMA1
IKFW75N60ETXKSA1
IGBT 晶(jing)體(ti)管(guan) Infineon's 600 V, 50 A hard-switching TRENCHSTOP IGBT3 copacked with full-rated free-wheeling diode in a TO247 advanced isolation package.
IPC70N04S54R6ATMA1
MOSFET MOSFET_(20V,40V)
IPP039N10N5AKSA1
MOSFET DIFFERENTIATED MOSFETS
IFCM30U65GDXKMA1
IGBT 模(mu)塊(kuai) IFPS MODULES
IFCM30T65GDXKMA1
IFCM20U65GDXKMA1
IRF250P224
MOSFET IFX OPTIMOS
IFCM20T65GDXKMA1
IKY50N120CH3XKSA1
IGBT 晶(jing)體(ti)管(guan)
IKQ50N120CT2XKSA1
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IKQ50N120CH3XKSA1
IPZA60R037P7XKSA1
MOSFET HIGH POWER_NEW
IKQ40N120CT2XKSA1
IRF250P225
IRF200P223
IKQ40N120CH3XKSA1
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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粵(yue)ICP備(bei)2022064169號(hao)