當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IKW30N65NL5XKSA1
IGBT 晶(jing)體(ti)管(guan) 650V IGBT Trenchstop 5
IPP076N15N5AKSA1
MOSFET
IKW30N60DTPXKSA1
IGBT 晶(jing)體(ti)管(guan) The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior.
IPD80R280P7ATMA1
IPD30N06S2L13ATMA4
MOSFET N-CHANNEL_55/60V
IPL65R099C7AUMA1
MOSFET HIGH POWER BEST IN CLASS
IPT65R033G7XTMA1
IPB044N15N5ATMA1
IPD80R450P7ATMA1
IPB048N15N5LFATMA1
IPZA60R060P7XKSA1
MOSFET HIGH POWER_NEW
IKZ50N65ES5XKSA1
IGBT 晶(jing)體(ti)管(guan) To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control l
IPL60R105P7AUMA1
IPZA60R120P7XKSA1
IPW60R125CFD7XKSA1
IPB60R120P7ATMA1
IPW60R170CFD7XKSA1
IPDD60R190G7XTMA1
IPW80R360P7XKSA1
IPA60R280CFD7XKSA1
MOSFET LOW POWER_NEW
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