當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IRF5210PBF
MOSFET MOSFT PCh -100V -40A 60mOhm 120nC
IPD031N06L3GATMA1
MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3
IRF6644TRPBF
MOSFET 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vgs
IRFB4620PBF
MOSFET MOSFT 200V 25A 72.5mOhm 25nC Qg
IRFB7434PBF
MOSFET 40V 1.6mOhm 195A HEXFET 294W 216nC
IRF1405ZPBF
MOSFET MOSFT 55V 150A 4.9mOhm 120nC
IRF4905LPBF
MOSFET MOSFT PCh -55V -74A 20mOhm 120nC
IKD15N60RFATMA1
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IRF2805PBF
MOSFET MOSFT 55V 175A 4.7mOhm 150nC
IPB067N08N3 G
MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
IRFB3307ZPBF
MOSFET MOSFT 75V 120A 5.8mOhm 79nC Qg
IPA60R280P6XKSA1
MOSFET N-Ch 600V 7.7A TO220FP-3
IRL2910PBF
MOSFET MOSFT 48A 93.3nC 260mOhm LogLvAB
IRL3705NSTRLPBF
MOSFET MOSFT 55V 89A 10mOhm 65.3nC LogLvl
IRFB4615PBF
MOSFET MOSFT 150V 34A 41mOhm 26nC Qg
IRFI4410ZPBF
MOSFET MOSFT 100V 65A 9.3mOhm 83nC
IRFH7084TRPBF
MOSFET MOSFET N-CH 40V 100A PQFN
IKD15N60RATMA1
IGBT 晶(jing)體(ti)管(guan) IGBT w/ INTG DIODE 600V 30A
IRF1407PBF
MOSFET MOSFT 75V 130A 7.8mOhm 160nC
IPB160N04S4H1ATMA1
MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
友(you)情(qing)鏈(lian)接(jie)
深(shen)圳(zhen)市(shi)宏(hong)欣(xin)微(wei)電(dian)子(zi)科(ke)技(ji)有(you)限(xian)公(gong)司(si)
原(yuan)廠(han)原(yuan)裝(zhuang)正(zheng)品(pin)，備(bei)大(dai)量(liang)庫(ku)存(cun)
7X24小(xiao)時(shi)詢(xun)價(jia)熱(re)線(xian)
0755-82572287
粵(yue)ICP備(bei)2022064169號(hao)