當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPD30N03S2L-20
MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
IRFHM8330TRPBF
MOSFET 30V SGL N-CH HEXFET Pwr MOSFET
IPW90R120C3FKSA1
MOSFET N-Ch 900V 36A TO247-3 CoolMOS C3
IKQ120N60TXKSA1
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IRG7PH46UD-EP
IGBT 晶(jing)體(ti)管(guan) IGBT DISCRETES
IKQ100N60TXKSA1
IKW40T120FKSA1
IGBT 晶(jing)體(ti)管(guan) LOW LOSS DuoPack 1200V 40A
IKW40T120
IKW40N120T2
IKW40N120H3FKSA1
IKW75N60TFKSA1
IGBT 晶(jing)體(ti)管(guan) LOW LOSS DuoPack 600V 75A
IRGP4069D-EPBF
IGBT 晶(jing)體(ti)管(guan) 600V Low VCEon Trench IGBT
IGW75N60H3
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS TrenchStop
IRGP4069DPBF
IGBT 晶(jing)體(ti)管(guan) 600V 76A
IPP410N30NAKSA1
MOSFET MV POWER MOS
IRGP4650DPBF
IGBT 晶(jing)體(ti)管(guan) 600V UltraFast IGBT 50A 268W 104nC
IRGP4068DPBF
IGBT 晶(jing)體(ti)管(guan) 600V UltraFast Trnch w/Ultra-Low VF Diode
IKW25T120
IGBT 晶(jing)體(ti)管(guan) LOW LOSS DuoPack 1200V 25A
IKW25T120FKSA1
IPT020N10N3
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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