當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPD031N03LGATMA1
MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3
IRLR8103VTRPBF
MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC
IRF9Z34NSTRLPBF
MOSFET MOSFT PCh -55V 19A 100mOhm 23.3nC
IPD60N10S4L12ATMA1
MOSFET N-Ch 100V 60A DPAK-2
IPD90N04S403ATMA1
MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
IRLR3103TRPBF
MOSFET 30V 1 N-CH HEXFET 19mOhms 33.3nC
IPD90N06S405ATMA2
MOSFET MOSFET
IPA60R460CEXKSA1
MOSFET N-Ch 600V 9.1A TO220FP-3
IGD06N60TATMA1
IGBT 晶體管 Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diod
IPD90N06S407ATMA2
IRFB7546PBF
MOSFET MOSFET N CH 60V 75A TO-220AB
IRF7468TRPBF
MOSFET MOSFT 40V 9A 15.5mOhm 23nC
IKD03N60RFATMA1
IGBT 晶體管 IGBT w/ INTG DIODE 600V 5A
IRFIZ24NPBF
MOSFET MOSFT 55V 13A 70mOhm 13.3nC
IRF6665TRPBF
MOSFET 100V 1 x N-CH HEXFET for Digital Audio
IRF540ZPBF
MOSFET MOSFT 100V 36A 26.5mOhm 42nC Qg
IRF7420TRPBF
MOSFET MOSFT PCh -12V -11.5A 14mOhm 38nC
IPD079N06L3GBTMA1
MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3
IRFR825TRPBF
MOSFET 500V 3.5A 2.2Ohm MotIRFET
IRFR3410TRPBF
MOSFET 100V SINGLE N-CH 39mOhms 37nC
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