當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
SMBT3906UE6327HTSA1
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) PNP Silicon Switch TRANSISTOR
SMBT3904E6327XT
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) AF GP BJT NPN 40V 0.2A
SMBT3906E6327HTSA1
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) AF GP BJT PNP 40V 0.2A
SPW47N60CFD
MOSFET N-Ch 600V 46A TO247-3 CoolMOS CFD
SKW25N120
IGBT 晶(jing)體(ti)管(guan) FAST IGBT NPT TECH 1200V 25A
SGW25N120
SKW30N60
IGBT 晶(jing)體(ti)管(guan) FAST IGBT NPT TECH 600V 30A
SGW30N60
SPP15N60CFDXKSA1
MOSFET N-Ch 650V 13.4A TO220-3
SPI21N50C3XKSA1
MOSFET N-Ch 560V 21A I2PAK-3
SPP11N60S5XKSA1
MOSFET N-Ch 600V 11A TO220-3
SPP11N60CFDXKSA1
MOSFET N-Ch 650V 11A TO220-3
SP000216320
MOSFET N-Ch 800V 11A TO220FP-3 CoolMOS C3
SPP04N50C3XKSA1
MOSFET N-Ch 560V 4.5A TO220-3
SPD03N60C3ATMA1
MOSFET LOW POWER_LEGACY
SN7002N H6327
MOSFET N-Ch 60V 200mA SOT-23-3
SGB15N120
IGBT 晶(jing)體(ti)管(guan) FAST IGBT NPT TECH 1200V 15A
SGP15N120
SPD50P03LGXT
MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P
SMBTA 06 E6327
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) NPN 80 V 500 mA
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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