當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
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MOSFET N-Ch 650V 7.3A I2PAK-3
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MOSFET N-Ch 650V 8.7A DPAK-2
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MOSFET N-Ch 30V,30V 40A,40A TISON-8
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MOSFET N-Ch 650V 6A DPAK-2
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MOSFET N-Ch 30V 40A TISON-8
SP000913772
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
SP000919762
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SKP02N120
IGBT 晶(jing)體(ti)管(guan) FAST IGBT NPT TECH 1200V 2A
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SP000010894
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SMBT 3904UPN E6327
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SMBTA 56 E6433
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SP000747446
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SMBT 3906U E6327
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SMBTA06E6433HTMA1
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) NPN Silicon AF TRANSISTOR
SMBTA14E6327HTSA1
達林頓晶(jing)體(ti)管(guan) AF Darlington NPN 30V 0.3A
SMBT3904E6433HTMA1
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) NPN Silicon Switch TRANSISTOR
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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