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當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao) >> IPB031N08N5ATMA1詳(xiang)細(xi)信(xin)息(xi)

IPB031N08N5ATMA1相(xiang)關(guan)型(xing)號(hao)

EVAL6ED100HPDRIVEASTOBO1

電(dian)源(yuan)管(guan)理(li)IC開(kai)發(fa)工(gong)具(ju) Infineon
EVALM1CTE610N3TOBO1

電(dian)源(yuan)管(guan)理(li)IC開(kai)發(fa)工(gong)具(ju)
EVALPSE1BF12SICTOBO1

電(dian)源(yuan)管(guan)理(li)IC開(kai)發(fa)工(gong)具(ju)
EVALPS540140ATOBO1

電(dian)源(yuan)管(guan)理(li)IC開(kai)發(fa)工(gong)具(ju) Evaluation kit for 5 output Digital PMBus PMIC with 40A PowerStage (4A+4A+2A+0.5A + 40A)
EVAL2QR0665G28W16VTOBO1

電(dian)源(yuan)管(guan)理(li)IC開(kai)發(fa)工(gong)具(ju) 28W 16V Evaluation Board with Quasi-Resonant CoolSET ICE2QR0665G 28W switching mode power supply evaluation board designed in a quasi resonant flyback converter topology using ICE2QR0665G Quasi-resonant CoolSET. With the CoolMOS integrated in this
EVAL2QR1765G18WTOBO1

電(dian)源(yuan)管(guan)理(li)IC開(kai)發(fa)工(gong)具(ju) 18W 5V Small Size Low Profile Evaluation Board with Quasi-Resonant CoolSET ICE2QR1765G Small size low profile 18W switching mode power supply evaluation board designed in a quasi resonant flyback converter topology using ICE2QR1765G Quasi-resonant C
EVAL1HS01G1200WTOBO1

電(dian)源(yuan)管(guan)理(li)IC開(kai)發(fa)工(gong)具(ju) This evaluation board is a 200W half bridge LLC resonant converter using an 8-pin LLC controller ICE1HS01G-1 as well as a high voltage CoolMOS Power MOSFET IPA50R299CP, developed by Infineon Technologies. ICE1HS01G-1 is specially designed for applic
EVALPFC3ICE3PCS01TOBO1

電(dian)源(yuan)管(guan)理(li)IC開(kai)發(fa)工(gong)具(ju) The evaluation board presented here is a 300W power factor correction (PFC) circuit with 85~265VAC universal input and output of 395VDC rated voltage or 333VDC in boost follower mode. The continuous conduction mode (CCM) PFC controller ICE3PCS01G is

熱(re)銷(xiao)型(xing)號(hao)

KLMBG2JETD-B041

**eMMC 5.1 嵌(kan)入(ru)式(shi)閃(shan)存(cun)存(cun)儲(chu)芯(xin)片(pian)（32GB）**，內(nei)置(zhi) NAND Flash + 存(cun)儲(chu)主(zhu)控(kong)，用(yong)來(lai)存(cun)放(fang)係(ji)統(tong)固(gu)件(jian)、操(cao)作(zuo)係(ji)統(tong)、應(ying)用(yong)程(cheng)序(xu)、日(ri)誌(zhi)、配(pei)置(zhi)文(wen)件(jian)；主(zhu)控(kong)自(zi)動(dong)完(wan)成(cheng) ECC 糾(jiu)錯(cuo)、壞(huai)塊(kuai)管(guan)理(li)、磨(mo)損(sun)均(jun)衡(heng)，SoC 隻(zhi)需(xu)要(yao)調(diao)用(yong)標(biao)準(zhun) MMC 協(xie)議(yi)讀(dou)寫(xie)，降(xiang)低(di)主(zhu)控(kong)驅(qu)動(dong)開(kai)發(fa)難(nan)度(duo)，支(zhi)持(chi) FOTA 升(sheng)級(ji)、RPMB 安(an)全(quan)分(fen)區(ou)存(cun)儲(chu)密(mi)鑰(yue)。
818017823

**50Ω 微(wei)型(xing)射(she)頻(pin)同(tong)軸(zhou)測(ce)試(shi)線(xian)纜(lan)組(zu)件(jian)**，用(yong)於(yu) PCB 射(she)頻(pin)焊(han)盤(pan) / 射(she)頻(pin)座(zuo)的(di)高(gao)頻(pin)信(xin)號(hao)轉(zhuan)接(jie)、射(she)頻(pin)性(xing)能(neng)調(diao)試(shi)測(ce)試(shi)；把(ba)板(pan)載(zai)射(she)頻(pin)信(xin)號(hao)引(yin)出(chu)到(dao)頻(pin)譜(pu)儀(yi)、信(xin)號(hao)源(yuan)、網(wang)絡(lao)分(fen)析(xi)儀(yi)，用(yong)於(yu) Wi‑Fi、藍(lan)牙(ya)、GPS、Sub‑G、5G 射(she)頻(pin)模(mu)塊(kuai)的(di)射(she)頻(pin)指(zhi)標(biao)調(diao)試(shi)、產(chan)線(xian)校(jiao)準(zhun)測(ce)試(shi)。
2N7002P

N 溝(gou)道(dao)增(zeng)強(jiang)型(xing)溝(gou)槽(cao) MOS 管(guan)，**低(di)壓(ya)側(zhai)電(dian)子(zi)開(kai)關(guan)**；柵(zha)極(ji)電(dian)壓(ya)控(kong)製(zhi)漏(lou)源(yuan)導(dao)通(tong) / 關(guan)斷(duan)，邏(luo)輯(ji)電(dian)平(ping)可(ke)驅(qu)動(dong)，用(yong)於(yu)小(xiao)電(dian)流(liu)負(fu)載(zai)通(tong)斷(duan)、繼(ji)電(dian)器(qi)驅(qu)動(dong)、高(gao)速(su)信(xin)號(hao)切(qie)換(huan)、電(dian)源(yuan)使(shi)能(neng)開(kai)關(guan)。
AMS1117-3.3

線(xian)性(xing)穩(wen)壓(ya)器(qi)(LDO)
SGM2034-1.8YN3G/TR

線(xian)性(xing)穩(wen)壓(ya)器(qi)(LDO)
74HC595D,118

移(yi)位(wei)寄(ji)存(cun)器(qi)
TLP290-4(GB-TP,E(T

晶(jing)體(ti)管(guan)輸(shu)出(chu)光(guang)耦(ou)
AD7606BSTZ-RL

ADC/DAC-專(zhuan)用(yong)型(xing)

圖(tu)片(pian)僅(jin)供(gong)參(shen)考(kao)，請(qing)參(shen)考(kao)產(chan)品(pin)描(miao)述(shu)

IPB031N08N5ATMA1

製(zhi)造(zao)商(shang)：Infineon Technologies

批(pi)號(hao)：19+

描(miao)述(shu)：MOSFET N-CH 80V TO263-3

PDF下(xia)載(zai)：

庫(ku)存(cun)數(shuo)量(liang)：2000+

優(you)勢(shi)價(jia)格(ge)，IPB031N08N5ATMA1的(di)國(guo)內(nei)現(xian)貨(huo)當(dang)天(tian)可(ke)發(fa)貨(huo),國(guo)外(wai)現(xian)貨(huo)7-10天(tian)發(fa)貨(huo)可(ke)發(fa)貨(huo)。

購(gou)買(mai)、谘(zi)詢(xun)產(chan)品(pin)請(qing)填(tian)寫(xie)詢(xun)價(jia)信(xin)息(xi)

詢(xun)價(jia)型(xing)號(hao)*	數(shuo)量(liang)*	批(pi)號(hao)	封(feng)裝(zhuang)	品(pin)牌(pai)	其(qi)它(ta)要(yao)求(qiu)

請(qing)確(que)認(ren)聯(lian)係(ji)方(fang)式(shi)，3分(fen)鍾(zhong)內(nei)即(ji)可(ke)給(ji)您(nin)回(hui)複(fu)

*姓(xing)名(ming)：
*電(dian)話(hua)：
Q Q：
*郵(you)箱(xiang)：

詳(xiang)細(xi)參(shen)數(shuo)

包(bao)裝(zhuang)Digi-Reel® 得(dei)捷(jie)定(ding)製(zhi)卷(juan)帶(dai)
係(ji)列(lie)OptiMOS™
零(ling)件(jian)狀(zhuang)態(tai)有(you)源(yuan)
FET 類(lei)型(xing)N 通(tong)道(dao)
技(ji)術(zhu)MOSFET（金(jin)屬(zhu)氧(yang)化(hua)物(wu)）
漏(lou)源(yuan)電(dian)壓(ya)（Vdss）80V
電(dian)流(liu) - 連(lian)續(xu)漏(lou)極(ji)（Id）（25°C 時(shi)）120A（Tc）
驅(qu)動(dong)電(dian)壓(ya)（最(zui)大(dai) Rds On，最(zui)小(xiao) Rds On）6V，10V
不(bu)同(tong)Id，Vgs 時(shi)的(di)Rds On（最(zui)大(dai)值(zhi)）3.1 毫(hao)歐(ou) @ 100A，10V
不(bu)同(tong) Id 時(shi)的(di) Vgs（th）（最(zui)大(dai)值(zhi)）3.8V @ 108µA
不(bu)同(tong) Vgs 時(shi)的(di)柵(zha)極(ji)電(dian)荷(he)（Qg）（最(zui)大(dai)值(zhi)）87nC @ 10V
Vgs（最(zui)大(dai)值(zhi)）±20V
不(bu)同(tong) Vds 時(shi)的(di)輸(shu)入(ru)電(dian)容(rong)（Ciss）（最(zui)大(dai)值(zhi)）6240pF @ 40V
FET 功(gong)能(neng)-
功(gong)率(shuai)耗(hao)散(san)（最(zui)大(dai)值(zhi)）167W（Tc）
工(gong)作(zuo)溫(wen)度(duo)-55°C ~ 175°C（TJ）
安(an)裝(zhuang)類(lei)型(xing)表(biao)麵(mian)貼(tie)裝(zhuang)型(xing)
供(gong)應(ying)商(shang)器(qi)件(jian)封(feng)裝(zhuang)D²PAK（TO-263AB）
封(feng)裝(zhuang)/外(wai)殼(qiao)TO-263-3，D²Pak（2 引(yin)線(xian) + 接(jie)片(pian)），TO-263AB

其(qi)它(ta)信(xin)息(xi)

一(yi)級(ji)代(dai)理(li)商(shang)，大(dai)小(xiao)批(pi)量(liang)出(chu)貨(huo)，歡(huan)迎(ying)來(lai)詢(xun)

原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)