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當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao) >> IRL520NPBF詳(xiang)細(xi)信(xin)息(xi)

IRL520NPBF相(xiang)關(guan)型(xing)號(hao)

IKW40N65F5FKSA1

IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IGW50N60TPXKSA1

IGBT 晶(jing)體(ti)管(guan) The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior.
IKW50N65ES5XKSA1

IGBT 晶(jing)體(ti)管(guan) TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
IPB90R340C3ATMA1

MOSFET N-Ch 900V 15A D2PAK-2
IPP60R099C7XKSA1

MOSFET HIGH POWER_NEW
IKW15N120H3

IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IKW15N120H3FKSA1

IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IPP65R095C7XKSA1

MOSFET HIGH POWER_NEW

熱(re)銷(xiao)型(xing)號(hao)

KLMBG2JETD-B041

**eMMC 5.1 嵌(kan)入(ru)式(shi)閃(shan)存(cun)存(cun)儲(chu)芯(xin)片(pian)（32GB）**，內(nei)置(zhi) NAND Flash + 存(cun)儲(chu)主(zhu)控(kong)，用(yong)來(lai)存(cun)放(fang)係(ji)統(tong)固(gu)件(jian)、操(cao)作(zuo)係(ji)統(tong)、應(ying)用(yong)程(cheng)序(xu)、日(ri)誌(zhi)、配(pei)置(zhi)文(wen)件(jian)；主(zhu)控(kong)自(zi)動(dong)完(wan)成(cheng) ECC 糾(jiu)錯(cuo)、壞(huai)塊(kuai)管(guan)理(li)、磨(mo)損(sun)均(jun)衡(heng)，SoC 隻(zhi)需(xu)要(yao)調(diao)用(yong)標(biao)準(zhun) MMC 協(xie)議(yi)讀(dou)寫(xie)，降(xiang)低(di)主(zhu)控(kong)驅(qu)動(dong)開(kai)發(fa)難(nan)度(duo)，支(zhi)持(chi) FOTA 升(sheng)級(ji)、RPMB 安(an)全(quan)分(fen)區(ou)存(cun)儲(chu)密(mi)鑰(yue)。
818017823

**50Ω 微(wei)型(xing)射(she)頻(pin)同(tong)軸(zhou)測(ce)試(shi)線(xian)纜(lan)組(zu)件(jian)**，用(yong)於(yu) PCB 射(she)頻(pin)焊(han)盤(pan) / 射(she)頻(pin)座(zuo)的(di)高(gao)頻(pin)信(xin)號(hao)轉(zhuan)接(jie)、射(she)頻(pin)性(xing)能(neng)調(diao)試(shi)測(ce)試(shi)；把(ba)板(pan)載(zai)射(she)頻(pin)信(xin)號(hao)引(yin)出(chu)到(dao)頻(pin)譜(pu)儀(yi)、信(xin)號(hao)源(yuan)、網(wang)絡(lao)分(fen)析(xi)儀(yi)，用(yong)於(yu) Wi‑Fi、藍(lan)牙(ya)、GPS、Sub‑G、5G 射(she)頻(pin)模(mu)塊(kuai)的(di)射(she)頻(pin)指(zhi)標(biao)調(diao)試(shi)、產(chan)線(xian)校(jiao)準(zhun)測(ce)試(shi)。
2N7002P

N 溝(gou)道(dao)增(zeng)強(jiang)型(xing)溝(gou)槽(cao) MOS 管(guan)，**低(di)壓(ya)側(zhai)電(dian)子(zi)開(kai)關(guan)**；柵(zha)極(ji)電(dian)壓(ya)控(kong)製(zhi)漏(lou)源(yuan)導(dao)通(tong) / 關(guan)斷(duan)，邏(luo)輯(ji)電(dian)平(ping)可(ke)驅(qu)動(dong)，用(yong)於(yu)小(xiao)電(dian)流(liu)負(fu)載(zai)通(tong)斷(duan)、繼(ji)電(dian)器(qi)驅(qu)動(dong)、高(gao)速(su)信(xin)號(hao)切(qie)換(huan)、電(dian)源(yuan)使(shi)能(neng)開(kai)關(guan)。
AMS1117-3.3

線(xian)性(xing)穩(wen)壓(ya)器(qi)(LDO)
SGM2034-1.8YN3G/TR

線(xian)性(xing)穩(wen)壓(ya)器(qi)(LDO)
74HC595D,118

移(yi)位(wei)寄(ji)存(cun)器(qi)
TLP290-4(GB-TP,E(T

晶(jing)體(ti)管(guan)輸(shu)出(chu)光(guang)耦(ou)
AD7606BSTZ-RL

ADC/DAC-專(zhuan)用(yong)型(xing)

圖(tu)片(pian)僅(jin)供(gong)參(shen)考(kao)，請(qing)參(shen)考(kao)產(chan)品(pin)描(miao)述(shu)

IRL520NPBF

製(zhi)造(zao)商(shang)：Infineon Technologies

批(pi)號(hao)：19+

描(miao)述(shu)：MOSFET MOSFT 10A 13.3nC 180mOhm LogLvAB

PDF下(xia)載(zai)：

庫(ku)存(cun)數(shuo)量(liang)：2000+

優(you)勢(shi)價(jia)格(ge)，IRL520NPBF的(di)國(guo)內(nei)現(xian)貨(huo)當(dang)天(tian)可(ke)發(fa)貨(huo),國(guo)外(wai)現(xian)貨(huo)7-10天(tian)發(fa)貨(huo)可(ke)發(fa)貨(huo)。

購(gou)買(mai)、谘(zi)詢(xun)產(chan)品(pin)請(qing)填(tian)寫(xie)詢(xun)價(jia)信(xin)息(xi)

詢(xun)價(jia)型(xing)號(hao)*	數(shuo)量(liang)*	批(pi)號(hao)	封(feng)裝(zhuang)	品(pin)牌(pai)	其(qi)它(ta)要(yao)求(qiu)

請(qing)確(que)認(ren)聯(lian)係(ji)方(fang)式(shi)，3分(fen)鍾(zhong)內(nei)即(ji)可(ke)給(ji)您(nin)回(hui)複(fu)

*姓(xing)名(ming)：
*電(dian)話(hua)：
Q Q：
*郵(you)箱(xiang)：

詳(xiang)細(xi)參(shen)數(shuo)

製(zhi)造(zao)商(shang):Infineon
產(chan)品(pin)種(zhong)類(lei):MOSFET
RoHS:是(shi)
技(ji)術(zhu):Si
安(an)裝(zhuang)風(feng)格(ge):Through Hole
封(feng)裝(zhuang) / 箱(xiang)體(ti):TO-220-3
通(tong)道(dao)數(shuo)量(liang):1 Channel
晶(jing)體(ti)管(guan)極(ji)性(xing):N-Channel
Vds-漏(lou)源(yuan)極(ji)擊(ji)穿(chuan)電(dian)壓(ya):100 V
Id-連(lian)續(xu)漏(lou)極(ji)電(dian)流(liu):10 A
Rds On-漏(lou)源(yuan)導(dao)通(tong)電(dian)阻(zu):180 mOhms
Vgs - 柵(zha)極(ji)-源(yuan)極(ji)電(dian)壓(ya):16 V
Qg-柵(zha)極(ji)電(dian)荷(he):13.3 nC
Pd-功(gong)率(shuai)耗(hao)散(san):48 W
配(pei)置(zhi):Single
封(feng)裝(zhuang):Tube
高(gao)度(duo):15.65 mm
長(zhang)度(duo):10 mm
晶(jing)體(ti)管(guan)類(lei)型(xing):1 N-Channel
寬(kuan)度(duo):4.4 mm
商(shang)標(biao):Infineon Technologies
產(chan)品(pin)類(lei)型(xing):MOSFET
工(gong)廠(han)包(bao)裝(zhuang)數(shuo)量(liang):1000
子(zi)類(lei)別(bie):MOSFETs
零(ling)件(jian)號(hao)別(bie)名(ming):SP001558080
單(shan)位(wei)重(chong)量(liang):6 g

其(qi)它(ta)信(xin)息(xi)

一(yi)級(ji)代(dai)理(li)商(shang)，大(dai)小(xiao)批(pi)量(liang)出(chu)貨(huo)，歡(huan)迎(ying)來(lai)詢(xun)

原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)