當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
2EDN8524FXTMA1
門(men)驅(qu)動(dong)器(qi) DRIVER IC
2ED020I12-F2
2ED2304S06FXUMA1
門(men)驅(qu)動(dong)器(qi) LEVEL SHIFT JUNCTION ISO
2EDS8165HXUMA1
2EDN8524GXTMA1
2EDF7175FXUMA1
門(men)驅(qu)動(dong)器(qi)
24VBATTSWITCHDEMO1
電(dian)源(yuan)管(guan)理(li)IC開(kai)發(fa)工(gong)具(ju) The 24 V ADR Switch Demonstrator shows a semiconductor based solution of a 24 V battery master switch for trucks as required by the ADR regulation
2ED300E17-SFO_EVAL
電(dian)源(yuan)管(guan)理(li)IC開(kai)發(fa)工(gong)具(ju) Eval Board 2ED300C17 -S/-ST IGBT drvr
24VSHIELDBTT6030TOBO1
電(dian)源(yuan)管(guan)理(li)IC開(kai)發(fa)工(gong)具(ju) 24V Switch Shield
2PS13512E43W39689
IGBT 模(mu)塊(kuai)
2LS20017E42W34854
2LS20017E42W40403
2PS12017E34W32132NOSA1
IGBT 模(mu)塊(kuai) STACKS IPM
2PS13512E43W35222NOSA1
2PS18012E44G38553NOSA1
2N7002DWH6327XT
MOSFET N-Ch 60V 300mA SOT-363-6
2N7002DW H6327
2LS20017E42W36702
2PS06017E32G28213
IGBT 模(mu)塊(kuai) 1x 325A AC at 690V AC Forced Air
2N7002DWH6327XTSA1
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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粵(yue)ICP備(bei)2022064169號(hao)