當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IRF135S203
MOSFET MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg
IRL40B212
MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl
IRF40H210
MOSFET TRENCH_MOSFETS
IRFI7446GPBF
IRF100B201
MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg
IRL7472L1TRPbF
MOSFET 40V, 375A, .59 mOhm 220 nC Qg, Logic Lvl
IRAC11688-TO220
子(zi)卡(qia)和(hu)OEM板(pan) Daughterboard for IR11688 for TO-220 MOSFETs
IRAC1167-D1
子(zi)卡(qia)和(hu)OEM板(pan) Daughterboard for IR1167, IR11662, or IR11672 and TO-220 MOSFETs
IRAC1167-D3
子(zi)卡(qia)和(hu)OEM板(pan) Daughterboard for IR1167, IR11662, or IR11672 and DirectFET MOSFETs
IRMD836
電(dian)源(yuan)管(guan)理(li)IC開(kai)發(fa)工(gong)具(ju) uIPM - Demoboard Featuring IRSM836
IRAC1167-D2
子(zi)卡(qia)和(hu)OEM板(pan) Daughterboard for IR1167, IR11662, or IR11672 and SOIC8 MOSFETs
IRMD808
電(dian)源(yuan)管(guan)理(li)IC開(kai)發(fa)工(gong)具(ju) uIPM - Demoboard Featuring IRSM808
HFA15TB60PBF
整流器(qi) 15A 600V Ultrafast diode
FF300R12KS4PHOSA1
IGBT 模(mu)塊(kuai) MEDIUM POWER 62MM
FP150R12KT4P_B11
IGBT 模(mu)塊(kuai)
FP150R12KT4P
FP150R12KT4_B11
FP150R12KT4
FF300R12KT4PHOSA1
CHL8510CRT
門(men)驅(qu)動(dong)器(qi) 12V HI EFFICIENCY MOSFET DRVR
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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