當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IRLB4030PBF
MOSFET MOSFT 100V 180A 4.3mOhm 87nC
IRFB4229PBF
MOSFET MOSFT 250V 46A 46mOhm 72nC Qg
IRFS4127TRLPBF
MOSFET MOSFT 200V 76A 23.2mOhm 100nC Qg
IRGB4056DPBF
IGBT 晶(jing)體(ti)管(guan) 600V UltraFast Trench IGBT
IRFP4310ZPBF
MOSFET MOSFT 100V 127A 6mOhm 120nC Qg
IPB180N04S400ATMA1
MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2
IRFB3077PBF
MOSFET MOSFT 75V 210A 3.3mOhm 160nC Qg
IRFS7434TRLPBF
MOSFET 40V StrongIRFET 195A,1.6mOhm,216nC
IRFS7434TRL7PP
MOSFET MOSFET N-CH 40V 240A D2PAK-7
IRFB4227PBF
MOSFET MOSFT 200V 65A 26mOhm 70nC Qg
IPB180N04S4H0ATMA1
IRFB4310PBF
MOSFET MOSFT 100V 140A 7mOhm 170nC
IRLB3034PBF
MOSFET MOSFT 40V 343A 1.7mOhm 108nC
IRF5210STRLPBF
MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC
IPB120N04S402ATMA1
MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2
IRF8302MTRPBF
MOSFET 30V N-Channel HEXFET Power MOSFET
IPD053N08N3GATMA1
MOSFET MV POWER MOS
IRF6616TRPBF
MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs
IRFIZ44NPBF
MOSFET MOSFT 55V 28A 24mOhm 43.3nC
IPG20N04S4L-07
MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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