當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IRLS4030TRL7PP
MOSFET MOSFT 100V 190A 3.9mOhm 93nC-7
IPW65R125C7XKSA1
MOSFET HIGH POWER_NEW
IHW20N135R3
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS TrenchStop
IKW40N65H5FKSA1
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IHW25N120R2
IGBT 晶(jing)體(ti)管(guan) REVERSE CONDUCT IGBT 1200V 25A
IPW60R125P6XKSA1
MOSFET HIGH POWER PRICE/PERFORM
IRGB4630DPBF
IGBT 晶(jing)體(ti)管(guan) 600V TRENCH IGBT ULTRAFAST
IPP65R125C7XKSA1
IPP023N08N5AKSA1
MOSFET N-Ch 80V 120A TO220-3
IGW15T120
IGBT 晶(jing)體(ti)管(guan) LOW LOSS IGBT TECH 1200V 15A
IHW40N60RFKSA1
IGBT 晶(jing)體(ti)管(guan) IH SeriesRev Conduct IGBT Monolithic Body
IPB015N04L G
MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3
IGW30N60T
IGBT 晶(jing)體(ti)管(guan) LOW LOSS IGBT TECH 600V 30A
IKW20N60TFKSA1
IGBT 晶(jing)體(ti)管(guan) LOW LOSS DuoPack 600V 20A
IGW40N65H5FKSA1
IPW60R160P6
MOSFET HIGH POWER_LEGACY
IKW20N60H3FKSA1
IGBT 晶(jing)體(ti)管(guan) 600V 20A 170W
IGW30N60H3
IGBT 晶(jing)體(ti)管(guan) 600V HI SPEED SW IGBT
IPW65R190C7XKSA1
IPB120N10S403ATMA1
MOSFET N-CHANNEL 100+
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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