當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IRG4BC10KDPBF
IGBT 晶(jing)體(ti)管(guan) 600V UltraFast 8-25kHz
IRFR6215TRRPBF
MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC
IRFHM8363TRPBF
MOSFET 30V DUAL N-CH HEXFET 14.9mOhms 15nC
IRGPS60B120KDP
IGBT 晶(jing)體(ti)管(guan) 1200V UltraFast 5-40kHz
IRG4PH50SPBF
IGBT 晶(jing)體(ti)管(guan) 1200V DC-1kHz
IRF6894MTRPBF
MOSFET 25V 1 N-CH HEXFET 1.3mOhms 26nC
IRF6811STRPBF
MOSFET 25V 1 N-CH HEXFET 3.7mOhms 11nC
IRGP50B60PDPBF
IGBT 晶(jing)體(ti)管(guan) 600V Warp2 150kHz
IRG4BC40WPBF
IGBT 晶(jing)體(ti)管(guan) 600V Warp 60-150kHz
IRG4BC30FD-SPBF
IGBT 晶(jing)體(ti)管(guan) 600V HYPERFAST 1-8 KHZ CO-PACK IGBT
IRG4IBC20KDPBF
IRG4BH20K-SPBF
IGBT 晶(jing)體(ti)管(guan) 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
IRFZ44VZSPBF
MOSFET MOSFT 60V 57A 12mOhm 43nC
IRFH4210DTRPBF
MOSFET 25V Single N-Ch HEXFET PWR 50A
IRFR5410TRRPBF
MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC
IRG4PH30KDPBF
IGBT 晶(jing)體(ti)管(guan) 1200V ULTRAFAST 4-20 KHZ COPACK IGBT
IRG4PC40UDPBF
IGBT 晶(jing)體(ti)管(guan) 600V UltraFast 8-60kHz
IRG4PC40SPBF
IGBT 晶(jing)體(ti)管(guan) 600V DC-1 KHZ (STD) DISCRETE IGBT
IRFH7911TRPBF
MOSFET 30V DUAL N-CH HEXFET 8.6mOhms 8.3nC
IRGR3B60KD2TRRP
IGBT 晶(jing)體(ti)管(guan) IGBT DISCRETES
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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