當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
SPB80P06PGATMA1
MOSFET P-Ch -60V 80A D2PAK-2
SKB02N120
IGBT 晶(jing)體(ti)管(guan) FAST IGBT NPT TECH 1200V 2A
SPA08N80C3
MOSFET N-Ch 800V 8A TO220FP-3 CoolMOS C3
SPA08N80C3XKSA1
SGB02N120
SPP06N80C3XKSA1
MOSFET N-Ch 800V 6A TO220-3 CoolMOS C3
SPP06N80C3
SPB18P06PGATMA1
MOSFET P-Ch -60V 18.6A D2PAK-2
SPD18P06PGBTMA1
MOSFET P-Ch -60V -18.6A DPAK-2
SI4410DYTRPBF
MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC
SPD09P06PLGBTMA1
MOSFET P-Ch -60V 9.7A DPAK-2
SPP04N80C3
MOSFET N-Ch 800V 4A TO220-3 CoolMOS C3
SPD15P10P G
MOSFET P-Ch -100V 15A DPAK-2
SPD04P10P G
MOSFET P-Ch -100V -4A DPAK-2
SPW47N65C3
MOSFET N-Ch 650V 47A TO247-3 CoolMOS C3
SPD04P10PL G
MOSFET P-Ch -100V 4.2A DPAK-2
SN7002NH6327XTSA2
MOSFET N-Ch 60V 200mA SOT-23-3
SPW17N80C3
MOSFET N-Ch 800V 17A TO247-3 CoolMOS C3
SPP08N80C3
MOSFET N-Ch 800V 8A TO220-3 CoolMOS C3
SPD06N80C3ATMA1
MOSFET LOW POWER_LEGACY
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